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SST200/200A
New Product
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
VGS(off) (V)
-0.3 to -0.9
V(BR)GSS Min (V)
-25
gfS Min (mS)
0.25
IDSS Min (mA)
0.7
FEATURES
D D D D Low Cutoff Voltage: <0.9 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA
BENEFITS
D High Quality Low-Level Signal Amplification D Low Signal Loss/System Error D High System Sensitivity
APPLICATIONS
D D D D Mini-Microphones Hearing Aids High-Gain, Low-Noise Amplifiers Low-Current, Low-Voltage Battery-Powered Amplifiers D Ultra High Input Impedance Pre-Amplifiers
DESCRIPTION
The SST200/200A features low leakage, very low noise and low cutoff voltage for use with low-level power supplies. The SST200/200A is excellent for battery powered equipment and low current amplifiers such as mini-microphones. The TO-236 (SOT-23) and SOT-323 (SC-70 3-leads) packages, provide surface-mount capability and is available in tape-and-reel for automated assembly.
For applications information see AN102 and AN106.
TO-236 (SOT-23)
SOT-323 (SC-70 3-LEADS)
D
1 3 G
D
1 3 G
S
2
S
2
Top View SST200 (P0)* *Marking Code for TO-236
Top View SST200A (C)* *Marking Code for SOT-323
Document Number: 70976 S-20517--Rev. D, 15-Apr-02
www.vishay.com
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SST200/200A
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipation To-236 (SOT-23)a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW SC-70b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW Notes a. Derate 2.8 mW/_C above 25_C b. Derate 1.2 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain Cutoff Current Gate-Source Forward Voltage V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 10 mA VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 0.1 mA VDS = 15 V, VGS = -5 V IG = 1 mA , VDS = 0 V -25 V -0.3 0.15 -2 -1 -2 2 0.7 pA V -0.9 0.7 -100 mA pA nA
Symbol
Test Conditions
Min
Typa
Max
Unit
Dynamic
Common-Source Forward Transconductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs Ciss Crss en VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 10 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 kHz 0.25 0.7 4.5 pF 1.3 6 nV Hz mS
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%.
NPA
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Document Number: 70976 S-20517--Rev. D, 15-Apr-02
SST200/200A
New Product
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
1.0 0.9 IDSS - Saturation Drain Current (mA) 0.8 0.7 0.6 0.5 0.4 0.3 IDSS 0.2 0.1 0.0 0.0 0.4 0.2 0 0.2 0.4 0.6 0.8 1.0 gfs 1.0 0.8 0.6 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 2.0 1.8 gfs - Forward Transconductance (S) 1.6 1.4 1.2 1 nA IG - Gate Leakage (A) TA = 125_C 10 nA
Vishay Siliconix
Gate Leakage Current
IG @ ID = 500 mA ID = 100 mA
100 pA
IGSS @ 125_C ID = 500 mA
10 pA ID = 100 mA TA = 25_C 1 pA IGSS @ 25_C
0.1 pA 0 15 VDG - Drain-Gate Voltage (V) 30
VGS(off) - Gate-Source Cutoff Voltage (V)
Output Characteristics
400 VGS(off) = -0.7 V 360 ID - Drain Current (mA) ID - Drain Current (mA) VGS = 0 V 400 500
Transfer Characteristics
VGS(off) = -0.7 V VDS = 10 V
240
-0.1 V
300
TA = -55_C 25_C
160
-0.2 V
200 125_C 100
-0.3 V 80 -0.5 V 0 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) -0.4 V
0 0 -0.1 -0.2 -0.3 -0.4 -0.5 VGS - Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
1.5 VGS(off) = -0.7 V gfs - Forward Transconductance (mS) 1.2 TA = -55_C 0.9 25_C VDS = 10 V f = 1 kHz
0.6 125_C 0.3
0 0 -0.1 -0.2 -0.3 -0.4 -0.5 VGS - Gate-Source Voltage (V)
Document Number: 70976 S-20517--Rev. D, 15-Apr-02
www.vishay.com
6-3
SST200/200A
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Circuit Voltage Gain vs. Drain Current
200 rDS(on) - Drain-Source On-Resistance ( ) g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 10 V ID 2000
On-Resistance vs. Drain Current
160 AV - Voltage Gain
1600 VGS(off) = -0.7 V 1200
120
80 -1.5 V 40
VGS(off) = -0.7 V
800 -1.5 V 400
0 0.01 0.1 ID - Drain Current (mA) 1
0 0.01 0.1 ID - Drain Current (mA) 1
Common-Source Input Capacitance vs. Gate-Source Voltage
10 Crss - Reverse Feedback Capacitance (pF) f = 1 MHz C iss - Input Capacitance (pF) 8
Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage
5 f = 1 MHz 4
6 VDS = 0 V 4 10 V 2
3 VDS = 0 V 2
1
10 V
0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V)
0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
20 VDS = 10 V Hz 16 ID - Drain Current (A)
Output Characteristics
300 VGS(off) = -0.7 V 240 -0.1 180 -0.2 120 -0.5 60 -0.3 -0.4 VGS = 0 V
en - Noise Voltage nV /
12
ID @ 100 mA
8 VGS = 0 V 4
0 10 100 1k f - Frequency (Hz) www.vishay.com 10 k 100 k
0 0 0.1 0.2 0.3 0.4 0.5
VDS - Drain-Source Voltage (V) Document Number: 70976 S-20517--Rev. D, 15-Apr-02
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